The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DATA SHEET www.onsemi.com
PNP Epitaxial Silicon Transistor
KSA1298
T
SOT−23 CASE 318
Low Frequency Power Amplifier
• Complement to KSC3265
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Ratings
Unit
VCBO Collector−Base Voltage
−30
V
VCEO Collector−Emitter Voltage
−25
V
VEBO Emitter−Base Voltage
−5
V
IC
Collector Current
−800
mA
IB
Base Current
−160
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
°C
TSTG Storage Temperature
−55 ~ 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
hFE Grade 3
J1YM
1. Base 2.