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PNP Epitaxial Silicon Transistor
KSA1381
Features
• High Voltage: VCEO = −300 V • Low Reverse Transfer Capacitance: Cre = 2.3 pF at VCB = −30 V • Excellent Gain Linearity for Low THD • High Frequency: 150 MHz • Full Thermal and Electrical Spice Models are Available • Complement to KSC3503 • This is a Pb−Free Device
Applications
• Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Units
BVCBO Collector−Base Voltage
−300
V
BVCEO Collector−Emitter Voltage
−300
V
BVEBO Emitter−Base Voltage
−5
V
IC
Collector Current (DC)
−100
mA
ICP
Collector Current (Pulse)
−200
mA
PC
Total Device Dissipation, TC=25°C
TC = 125°C
7
W
1.
KSA1381 Datasheet
