• Part: KSA1381
  • Description: PNP Epitaxial Silicon Transistor
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 208.21 KB
Download KSA1381 Datasheet PDF
onsemi
KSA1381
Features - High Voltage: VCEO = - 300 V - Low Reverse Transfer Capacitance: Cre = 2.3 p F at VCB = - 30 V - Excellent Gain Linearity for Low THD - High Frequency: 150 MHz - Full Thermal and Electrical Spice Models are Available - plement to KSC3503 - This is a Pb- Free Device Applications - Audio, Voltage Amplifier and Current Source - CRT Display, Video Output - General Purpose Amplifier ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Ratings Units BVCBO Collector- Base Voltage - 300 BVCEO Collector- Emitter Voltage - 300 BVEBO Emitter- Base Voltage - 5 Collector Current (DC) - 100 m A Collector Current (Pulse) - 200 m A Total Device Dissipation, TC=25°C TC = 125°C TJ, TSTG Junction and Storage Temperature - 55~+150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability...