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KSC1815 - NPN Epitaxial Silicon Transistor

General Description

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92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components I

Key Features

  • Audio Frequency Amplifier and High-Frequency OSC.
  • Complement to KSA1015.
  • Collector-Base Voltage: VCBO = 60 V.
  • This is a Pb-Free Device.

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Datasheet Details

Part number KSC1815
Manufacturer onsemi
File Size 128.00 KB
Description NPN Epitaxial Silicon Transistor
Datasheet download datasheet KSC1815 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Epitaxial Silicon Transistor KSC1815 Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 60 V • This is a Pb-Free Device MAXIMUM RATINGS (Values are at TA = 25 °C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 150 mA IB Base Current 50 mA TJ Junction Temperature 150 °C TSTG Storage Temperature Range −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.