KSC2690A - NPN Epitaxial Silicon Transistor

onsemi

General Description

TO 126

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Key Features

Complement to KSA1220A.
This is a Pb.
Free Device.

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KSC2690A npn epitaxial silicon transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	KSC2690A
Manufacturer	onsemi
File Size	231.31 KB
Description	NPN Epitaxial Silicon Transistor
Datasheet	KSC2690A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Epitaxial Silicon Transistor KSC2690A Features • Complement to KSA1220A • This is a Pb−Free Device Applications • Audio Frequency • High Frequency Power Amplifier ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Units VCBO Collector−Base Voltage 160 V VCEO Collector−Emitter Voltage 160 V VEBO Emitter−Base Voltage 5 V IC Collector Current (DC) 1.2 A ICP Collector Current (Pulse) * 2.5 A IB Base Current (DC) 0.3 A PC Collector Dissipation, TA = 25°C TC = 25°C 1.2 W 20 TJ Junction Temperature 150 °C TSTG Storage Temperature −55 ~ 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.