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KSP55 - PNP Epitaxial Silicon Transistor

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Description

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Features

  • Collector.
  • Emitter Voltage: VCEO = KSP55:.
  • 60 V.
  • Collector Dissipation: PC (Max. ) = 625 mW.
  • Complement to KSP05/06.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number KSP55
Manufacturer ON Semiconductor
File Size 117.84 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet KSP55 Datasheet
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Full PDF Text Transcription

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DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor KSP55 Features • Collector−Emitter Voltage: VCEO = KSP55: −60 V • Collector Dissipation: PC (Max.) = 625 mW • Complement to KSP05/06 • This is a Pb−Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit VCBO Collector−Base Voltage −60 V VCEO Collector−Emitter Voltage −60 V VEBO Emitter−Base Voltage −4 V IC Collector Current −500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.
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