KSP55 - PNP Epitaxial Silicon Transistor

onsemi

General Description

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Key Features

Collector.
Emitter Voltage: VCEO = KSP55:.
60 V.
Collector Dissipation: PC (Max. ) = 625 mW.
Complement to KSP05/06.
This is a Pb.
Free Device.

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KSP55 pnp epitaxial silicon transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	KSP55
Manufacturer	onsemi
File Size	117.84 KB
Description	PNP Epitaxial Silicon Transistor
Datasheet	KSP55 Datasheet

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DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor KSP55 Features • Collector−Emitter Voltage: VCEO = KSP55: −60 V • Collector Dissipation: PC (Max.) = 625 mW • Complement to KSP05/06 • This is a Pb−Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit VCBO Collector−Base Voltage −60 V VCEO Collector−Emitter Voltage −60 V VEBO Emitter−Base Voltage −4 V IC Collector Current −500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.