The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
LA733P
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol VCEO VCBO VEBO IC PD
PD
TJ, Tstg
Symbol RqJA RqJC
Value –48 –60 –5.0 –100
Unit Vdc Vdc Vdc mAdc
625 mW 5.0 mW/°C
1.5 12
–55 to +150
Watts mW/°C
°C
Max Unit 200 °C/W
83.3 °C/W
http://onsemi.
LA733P Datasheet
