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M1MA174T1
Preferred Device
Silicon Switching Diode
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD Value 100 200 500 200 Unit V mA mA mW 3 CATHODE 1 ANODE
http://onsemi.com
1.6
mW/°C 3
TJ, Tstg
–55 to +150
°C
1 2 SC–70/SOT–323 CASE 419 STYLE 2
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol RθJA Max 0.
M1MA174T1 Datasheet
