Datasheet4U Logo Datasheet4U.com

MAC212A8 - Triacs Silicon Bidirectional Thyristors

Download the MAC212A8 datasheet PDF. This datasheet also covers the MAC212A10 variant, as both devices belong to the same triacs silicon bidirectional thyristors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • http://onsemi. com.
  • Blocking Voltage to 800 Volts.
  • All Diffused and Glass Passivated Junctions for Greater Parameter.
  • Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in Four Modes Pb.
  • Free Packages are Available.
  • TRIACS 12.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAC212A10_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MAC212A8
Manufacturer onsemi
File Size 88.77 KB
Description Triacs Silicon Bidirectional Thyristors
Datasheet download datasheet MAC212A8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MAC212A8 Triac Motorola
MAC212A8FP Triac Motorola
MAC212A10 Triac Motorola
MAC212A10FP Triac Motorola
MAC212A4 Triac Motorola

Other Datasheets by onsemi

Part Number Description
MAC212A8FP Triacs
MAC212A10 Triacs Silicon Bidirectional Thyristors
MAC212A10FP Triacs
MAC212A6FP Triacs
MAC210A10 Triacs Silicon Bidirectional Thyristors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MAC212A8, MAC212A10 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features http://onsemi.