Download MBD301G Datasheet PDF
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MBD301G Description

Silicon Hot-Carrier Diodes Schottky Barrier Diodes MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/mercial requirements.

MBD301G Key Features

  • Extremely Low Minority Carrier Lifetime
  • 15 ps (Typ)
  • Very Low Capacitance
  • 1.5 pF (Max) @ VR = 15 V
  • Low Reverse Leakage
  • IR = 13 nAdc (Typ) MBD301, MMBD301
  • S Prefix for Automotive and Other