MBD770DWT1G Overview
MBD770DWT1G, NSVMBD770DW1T1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage • AEC Qualified and PPAP Capable • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Forward Power Dissipation @ TA = 25°C Derate above 25°C (Note 1) VR 70 V PF 380 mW 3 mW/°C Operating Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device...
MBD770DWT1G Key Features
- Extremely Fast Switching Speed
- Low Forward Voltage
- AEC Qualified and PPAP Capable
- NSV Prefix for Automotive and Other
