MBR160 Datasheet | onsemi

features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. Features - Low Reverse Current - Low Stored Charge, Majority Carrier Conduction - Low Power Loss/High Efficiency - Highly Stable Oxide Passivated Junction - These are Pb- Free Devices- Mechanical Characteristics: - Case: Epoxy, Molded - Weight: 0.4 Gram (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds - Polarity: Cathode Indicated by Polarity Band MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM MBR150 Working Peak Reverse Voltage DC Blocking Voltage VRWM VR RMS Reverse Voltage MBR150 VR(RMS) Average Rectified Forward Current (Note 1) (VR(equiv) v 0.2 VR(dc), TL = 90C, Rq JA = 80C/W, P.C. Board Mounting, TA = 55C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70C) IFSM (for one cycle) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) TJ, Tstg - 65 to C +150 THERMAL CHARACTERISTICS (Notes 1 and...