MBR2030CTL - Dual Schottky Power Rectifier

onsemi

Key Features

Highly Stable Oxide Passivated Junction.
Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C).
High Junction Temperature.
High dv/dt Capability.
Excellent Ability to Withstand Reverse Avalanche Energy Transients.
Low Power Loss/High Efficiency.
High Surge Capacity.
175°C Operating Junction Temperature.
20 A Total (10 A Per Diode Leg).
This Device is Pb.
Free and is RoHS Compliant.
Applicat.

MBR2030CTL dual schottky power rectifier by onsemi - Datasheet Preview

Datasheet Details

Part number	MBR2030CTL
Manufacturer	onsemi
File Size	237.55 KB
Description	Dual Schottky Power Rectifier
Datasheet	MBR2030CTL Datasheet

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Full PDF Text Transcription (Reference)

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MBR2030CTLG Switch-mode Dual Schottky Power Rectifier Features and Benefits • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C) • High Junction Temperature • High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • This Device is Pb−Free and is RoHS Compliant* Applications • Power Supply − Output Rectification • Power Management − ORING • Instrumentation Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 1.