MBR3060 Datasheet | onsemi

Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. - Extremely Low Vf - Low Power Loss/High Efficiency - Highly Stable Oxide Passivated Junction - Low Stored Charge, Majority Carrier Conduction Mechanical Characteristics: - Case: Epoxy, Molded - Weight: 0.4 gram (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and...