The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MBR3060
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low Vf • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
• Case: Epoxy, Molded • Weight: 0.4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max.