MBR30H100CT Key Features
- Low Forward Voltage: 0.67 V @ 125°C
- Low Power Loss/High Efficiency
- High Surge Capacity
- 175°C Operating Junction Temperature
- 30 A Total (15 A Per Diode Leg)
- These are Pb-Free Devices
- Part: MBR30H100CT
- Manufacturer: onsemi
- Size: 319.08 KB
Other MBR30H100CT Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
MBR30H100CT | Schottky Barrier Rectifier |
Vishay |
MBR30H100CT | Dual Common Cathode High Voltage Schottky Rectifier |
Taiwan Semiconductor |
MBR30H100CT | Dual Common Cathode Schottky Rectifier |
Sirectifier |
MBR30H100CT | Power Schottky Rectifier |
Diodes Incorporated |
MBR30H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |