MBR3100 - Axial Lead Rectifier

onsemi

Key Features

epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low.
voltage, high.
frequency inverters, free wheeling diodes, and polarity protection diodes. Features.
Low Reverse Current.
Low Stored Charge, Majority Carrier Conduction.
Low Power Loss/High Efficiency.
Highly Stable Oxide Passivated Junction.
Guard.
ring for Stress Protection.
Low Forward Voltage.
175C Operating Junction Tem.

MBR3100 axial lead rectifier by onsemi - Datasheet Preview

Datasheet Details

Part number	MBR3100
Manufacturer	onsemi
File Size	161.36 KB
Description	Axial Lead Rectifier
Datasheet	MBR3100 Datasheet

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Full PDF Text Transcription (Reference)

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Axial Lead Rectifier MBR3100 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features  Low Reverse Current  Low Stored Charge, Majority Carrier Conduction  Low Power Loss/High Efficiency  Highly Stable Oxide Passivated Junction  Guard−ring for Stress Protection  Low Forward Voltage  175C Operating Junction Temperature  High Surge Capacity  Pb−Free Packages are Available* Mechanical Characteristics:  Case: Epoxy, Molded  Weight: 1.