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MBR3100 Datasheet Axial Lead Rectifier

Manufacturer: onsemi

Overview: Axial Lead Rectifier MBR3100 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode.

Key Features

  • epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low.
  • voltage, high.
  • frequency inverters, free wheeling diodes, and polarity protection diodes. Features.
  • Low Reverse Current.
  • Low Stored Charge, Majority Carrier Conduction.
  • Low Power Loss/High Efficiency.
  • Highly Stable Oxide Passivated Junction.
  • Guard.
  • ring for Stress Protection.
  • Low Forward Voltage.
  • 175C Operating Junction Tem.

MBR3100 Distributor