MBR3100 Description
Axial Lead Rectifier MBR3100 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry.
MBR3100 Key Features
- Low Reverse Current
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- Highly Stable Oxide Passivated Junction
- Guard-ring for Stress Protection
- Low Forward Voltage
- 175C Operating Junction Temperature
- High Surge Capacity
- Pb-Free Packages are Available
- Case: Epoxy, Molded