MBR3100 Datasheet | onsemi

Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. Features - Low Reverse Current - Low Stored Charge, Majority Carrier Conduction - Low Power Loss/High Efficiency - Highly Stable Oxide Passivated Junction - Guard- ring for Stress Protection - Low Forward Voltage - 175C Operating Junction Temperature - High Surge Capacity - Pb- Free Packages are Available- Mechanical...