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MBR3100

Manufacturer: onsemi

MBR3100 datasheet by onsemi.

MBR3100 datasheet preview

MBR3100 Datasheet Details

Part number MBR3100
Datasheet MBR3100_ONSemiconductor.pdf
File Size 161.36 KB
Manufacturer onsemi
Description Axial Lead Rectifier
MBR3100 page 2 MBR3100 page 3

MBR3100 Overview

Axial Lead Rectifier MBR3100 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry.

MBR3100 Key Features

  • Low Reverse Current
  • Low Stored Charge, Majority Carrier Conduction
  • Low Power Loss/High Efficiency
  • Highly Stable Oxide Passivated Junction
  • Guard-ring for Stress Protection
  • Low Forward Voltage
  • 175C Operating Junction Temperature
  • High Surge Capacity
  • Pb-Free Packages are Available
  • Case: Epoxy, Molded

MBR3100 from other manufacturers

View MBR3100 datasheet index

Brand Logo Part Number Description Other Manufacturers
UTC Logo MBR3100 3.0A SCHOTTKY BARRIER RECTIFIER UTC
Digitron Semiconductors Logo MBR3100 3 AMP SCHOTTKY RECTIFIERS Digitron Semiconductors
Kexin Logo MBR3100 Schottky Barrier Rectifier Kexin
Motorola Logo MBR3100 Axial Lead Rectifiers Motorola
Sunmate Logo MBR3100 AXIAL LEADED SCHOTTKY BARRIER RECTIFIER Sunmate
onsemi logo - Manufacturer

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