MBR4015LWT Datasheet | onsemi

SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal- to- silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features - Highly Stable Oxide Passivated Junction - Guardring for Overvoltage Protection - Low Forward Voltage Drop - Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating. - Full Electrical Isolation without Additional Hardware - Pb- Free Package is Available- Mechanical...