MBR60H100CT Datasheet | onsemi

Features and Benefits - - - - - - Low Forward Voltage: 0.72 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 60 A Total (30 A Per Diode Leg) Pb- Free Package is Available http://onsemi. SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS 1 2, 4 3 4 Applications - Power Supply - Output Rectification - Power Management - Instrumentation Mechanical Characteristics: - - - - - - MARKING DIAGRAM Case: Epoxy, Molded Epoxy Meets UL 94 V- 0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C TO- 220AB CASE 221A PLASTIC 1 2 AYWW B60H100G AKA 3 A Y WW B60H100 G AKA = Assembly Location = Year = Work Week = Device Code = Pb- Free Package = Polarity Designator MAXIMUM RATINGS Please See the Table on the Following Page ORDERING INFORMATION Device MBR60H100CT MBR60H100CTG Package TO- 220 TO- 220 (Pb- Free) Shipping 50 Units/Rail 50 Units/Rail © Semiconductor ponents Industries, LLC, 2006 July, 2006 - Rev. 1 Publication Order Number: MBR60H100CT/D MAXIMUM RATINGS (Per Diode Leg) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 155°C) Per Diode Per Device Peak Repetitive Forward Current (Square Wave, 20 k Hz, TC = 151°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) Controlled Avalanche Energy (see test conditions in Figures 9 and 10) ESD Ratings: Machine Model = C Human Body Model = 3B Symbol VRRM VRWM VR IF(AV) 30 60 IFRM IFSM TJ Tstg dv/dt WAVAL 60 350 +175 - 65 to +175 10,000 400 > 400 > 8000 A A °C °C V/ms m J V Value 100 Unit V Maximum ratings are those values beyond which device...