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MBR8170TFS - Schottky Barrier Rectifier

Key Features

  • Lower Forward Voltage Drop.
  • Less Leakage Current in High Temperature.
  • Small Junction Capacitance for High Switching Frequency.
  • Higher Avalanche Energy Capability.
  • 175C Operating Junction Temperature.
  • Good Alternative Solution of SMA and SMB Package.
  • Small Footprint.
  • Land Area: 12.5 mm2.
  • Low Profile.
  • Maximum Height of 1.1 mm.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics:.

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Datasheet Details

Part number MBR8170TFS
Manufacturer onsemi
File Size 224.86 KB
Description Schottky Barrier Rectifier
Datasheet download datasheet MBR8170TFS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Rectifier MBR8170TFS This Schottky rectifier is high performance device in m8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or reverse protection application. The m8−FL package provides an excellent thermal performance, less land area of board space, and low profile. Features  Lower Forward Voltage Drop  Less Leakage Current in High Temperature  Small Junction Capacitance for High Switching Frequency  Higher Avalanche Energy Capability  175C Operating Junction Temperature  Good Alternative Solution of SMA and SMB Package  Small Footprint − Land Area: 12.