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MBR8170TFS

Manufacturer: onsemi

MBR8170TFS datasheet by onsemi.

MBR8170TFS datasheet preview

MBR8170TFS Datasheet Details

Part number MBR8170TFS
Datasheet MBR8170TFS-ONSemiconductor.pdf
File Size 224.86 KB
Manufacturer onsemi
Description Schottky Barrier Rectifier
MBR8170TFS page 2 MBR8170TFS page 3

MBR8170TFS Overview

Schottky Barrier Rectifier MBR8170TFS This Schottky rectifier is high performance device in m8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Oring or reverse protection application.

MBR8170TFS Key Features

  • Lower Forward Voltage Drop
  • Less Leakage Current in High Temperature
  • Small Junction Capacitance for High Switching Frequency
  • Higher Avalanche Energy Capability
  • 175C Operating Junction Temperature
  • Good Alternative Solution of SMA and SMB Package
  • Small Footprint
  • Land Area: 12.5 mm2
  • Low Profile
  • Maximum Height of 1.1 mm
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