MBR845 Datasheet | onsemi

.. MBR835, MBR840, MBR845 Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. http://onsemi. - - - - - - - High Current Capability Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard- Ring for Stress Protection Low Forward Voltage High Surge Capacity SCHOTTKY BARRIER RECTIFIERS...