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MBRB20200CT - Power Rectifier

Key Features

  • 200 V Blocking Voltage.
  • Low Forward Voltage Drop.
  • Guardring for Stress Protection and High dv/dt Capability (10,000 V/ms).
  • Dual Diode Construction.
  • Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating.
  • Pb.
  • Free Packages are Available http://onsemi. com.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBRB20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 kHz to 5.0 MHz. Features • 200 V Blocking Voltage • Low Forward Voltage Drop • Guardring for Stress Protection and High dv/dt Capability (10,000 V/ms) • Dual Diode Construction − Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating • Pb−Free Packages are Available http://onsemi.