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MBRB2515L - Power Rectifier ORing Function Diode

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. Features.
  • Guardring for Stress Protection.
  • Low Forward Voltage.
  • 100°C Operating Junction Temperature.
  • Epoxy Meets UL 94 V.
  • 0 @ 0.125 in.
  • Short Heat Sink Tab Manufactured.
  • Not Sheared.
  • Similar in Size to the Industry Standar.

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Datasheet Details

Part number MBRB2515L
Manufacturer onsemi
File Size 219.17 KB
Description Power Rectifier ORing Function Diode
Datasheet download datasheet MBRB2515L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBRB2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. Features • Guardring for Stress Protection • Low Forward Voltage • 100°C Operating Junction Temperature • Epoxy Meets UL 94 V−0 @ 0.