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MBRF1545CT - Schottky Power Rectifier

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low.
  • voltage, high.
  • frequency switching power supplies, free wheeling diodes and polarity protection diodes.
  • Highly Stable Oxide Passivated Junction.
  • Very Low Forward Voltage Drop.
  • Matched Dual Die Construction.
  • High Junction Temperature Capability.
  • High dv/dt Capability.
  • Excellent Ability to Withstand Reverse A.

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Datasheet Details

Part number MBRF1545CT
Manufacturer onsemi
File Size 130.32 KB
Description Schottky Power Rectifier
Datasheet download datasheet MBRF1545CT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBRF1545CT SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction • High Junction Temperature Capability • High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guardring for Stress Protection • Epoxy Meets UL94, VO at 1/8″ • Electrically Isolated. No Isolation Hardware Required.