MBRF20100CT Datasheet | onsemi

MBRF20100CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal - to - silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low - voltage, high - frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features http://onsemi. - - - - - - - - - - Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy...