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MBRJ2545CTG - Schottky Power Rectifier

Datasheet Summary

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low.
  • voltage, high.
  • frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features.
  • Highly Stable Oxide Passivated Junction.
  • Very Low Forward Voltage Drop.
  • Matched Dual Die Construction.
  • High Junction Temperature Capability.
  • High dv/dt Capability.
  • Excellent Ability to Withstand.

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Datasheet preview – MBRJ2545CTG

Datasheet Details

Part number MBRJ2545CTG
Manufacturer ON Semiconductor
File Size 100.83 KB
Description Schottky Power Rectifier
Datasheet download datasheet MBRJ2545CTG Datasheet
Additional preview pages of the MBRJ2545CTG datasheet.

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Full PDF Text Transcription

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MBRJ2545CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction • High Junction Temperature Capability • High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guardring for Stress Protection • Epoxy Meets UL 94 V−0 @ 0.
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