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MBRS1100T3 - Schottky Power Rectifier

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount.

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Datasheet Details

Part number MBRS1100T3
Manufacturer onsemi
File Size 46.96 KB
Description Schottky Power Rectifier
Datasheet download datasheet MBRS1100T3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features: http://onsemi.