MBRS130LT3 Datasheet | onsemi

Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where pact size and weight are critical to the system. Features - Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C) - Small pact Surface Mountable Package with J- Bend Leads - Highly Stable Oxide Passivated Junction - Guard- Ring for Stress Protection - Pb- Free...