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MBT35200MT1 - High Current Surface Mount PNP Silicon Switching Transistor

Key Features

  • AEC.
  • Q101 Qualified and PPAP Capable.
  • S Prefix for Automotive and Other.

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Datasheet Details

Part number MBT35200MT1
Manufacturer onsemi
File Size 192.31 KB
Description High Current Surface Mount PNP Silicon Switching Transistor
Datasheet download datasheet MBT35200MT1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MBT35200MT1 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge VCEO VCBO VEBO IC ICM ESD −35 Vdc −55 Vdc −5.0 Vdc −2.0 Adc −5.0 A HBM Class 3 MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 625 mW 5.