MBT35200MT1
MBT35200MT1 is High Current Surface Mount PNP Silicon Switching Transistor manufactured by onsemi.
Features
- AEC- Q101 Qualified and PPAP Capable
- S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS (TA = 25°C) Rating
Symbol
Max
Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous Collector Current
- Peak Electrostatic Discharge
VCEO VCBO VEBO
IC ICM ESD
- 35
Vdc
- 55
Vdc
- 5.0
Vdc
- 2.0
Adc
- 5.0
HBM Class 3 MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation TA = 25°C Derate above 25°C
PD (Note 1)
625 m W
5.0 m W/°C
Thermal Resistance, Junction- to- Ambient
Rq JA (Note 1) 200
°C/W
Total Device Dissipation TA = 25°C Derate above 25°C
PD (Note...
