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MBT3906DW1T1G - Dual General Purpose Transistor

Datasheet Summary

Features

  • http://onsemi. com (3) (2) (1).
  • hFE, 100.
  • 300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7.
  • inch/3,000 Unit Tape and Reel These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant Q1 Q2 (4) (5) (6) 1.

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Datasheet Details

Part number MBT3906DW1T1G
Manufacturer ON Semiconductor
File Size 195.33 KB
Description Dual General Purpose Transistor
Datasheet download datasheet MBT3906DW1T1G Datasheet
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Full PDF Text Transcription

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MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features http://onsemi.com (3) (2) (1) • • • • • • • hFE, 100−300 Low VCE(sat), ≤ 0.
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