MC33170 Datasheet | onsemi

MC33170 RF Amplifier panion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a plete solution for drain modulated dual- band GSM 900MHz and DCS- 1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband logic section, providing an immediate gain in part count but also in occupied copper area. The device is also ready for 1V platforms since it accepts logic high control signals down to 900m V@25°C. A priority management system ensures the negative is present before authorizing the power modulation, giving the necessary ruggedness to the final design. This function can easily be disabled for PAs not requiring a negative bias. The device is able to directly drive an external P or N- channel with the possibility to linearize the overall response via the internal high- performance control amplifier and easily implement system gain. Finally, an LDO delivers a stable voltage, usable for external biasing purposes. http://onsemi. TSSOP- 14 DTB SUFFIX CASE 948G PIN CONNECTIONS Band Selection Tx Enable GSM-900 1 2 3 14 mon Enable 13 Negative Regulator 12 Out 11 Vboost 10 INV 9 8 NINV LDO DCS-1800 4 PA Start-up Gnd Vbat 5 6 7 - 1V platform patible: ON voltage = 900m V, OFF voltage = - - - - - 300m V max Priority management system prevents power modulation before negative bias establishes High performance 4.5MHz gain- bandwidth product operational amplifier Drives N or P- channel MOSFET 2.5V low- noise LDO Idle mode input for very low power consumption (standby mode) (Top View) ORDERING INFORMATION Device MC33170DTB Package TSSOP- 14 Shipping 96 Units / Rail MC33170DTBR2 TSSOP- 14 2500 / Tape & Reel NINV 9 Shutdown 2.5 V Low Dropout 2.5 V Vbat Vboost Vbat (5.5 V Max) 11 7 Shutdown LDO Output mon Enable TX Enable Band Selection 2.5 V 8 + 14 2 1 Open- Collector BG Decoder BD B′G 1 m A Continuous 3 GSM- 900 4 700 m A Peak 50 m A Continuous Clip to - 5 V 13 10 6 12 Out - NEGOK? 5 DCS-...