Datasheet4U Logo Datasheet4U.com

MCH3475 - Power MOSFET

Features

  • High Speed Switching.
  • 4V Drive.
  • Pb-Free and RoHS Compliance.
  • Halogen Free Compliance : MCH3475-TL-W VDSS 30V RDS(on) Max 180mΩ@ 10V 330mΩ@ 4V ID Max 1.8A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 1.8 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 7.2 A Power Dissipation When mounted on ceramic substrate (900m.

📥 Download Datasheet

Datasheet preview – MCH3475

Datasheet Details

Part number MCH3475
Manufacturer ON Semiconductor
File Size 359.98 KB
Description Power MOSFET
Datasheet download datasheet MCH3475 Datasheet
Additional preview pages of the MCH3475 datasheet.

📁 Similar Datasheet

  • MCH3475 - N-Channel Silicon MOSFET General-Purpose Switching Device Applications (Sanyo Semicon Device)
  • MCH3474 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
  • MCH3477 - N-Channel Silicon MOSFET General-Purpose Switching Device Applications (Sanyo Semicon Device)
  • MCH3478 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
  • MCH3401 - Ultrahigh-Speed Switching Applications (Sanyo)
  • MCH3402 - Ultrahigh-Speed Switching Applications (Sanyo)
  • MCH3405 - Ultrahigh-Speed Switching Applications (Sanyo)
  • MCH3406 - Ultrahigh-Speed Switching Applications (Sanyo)
  • MCH3408 - Ultrahigh-Speed Switching Applications (Sanyo)
  • MCH3409 - Ultrahigh-Speed Switching Applications (Sanyo)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MCH3475 Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel www.onsemi.com Features • High Speed Switching • 4V Drive • Pb-Free and RoHS Compliance • Halogen Free Compliance : MCH3475-TL-W VDSS 30V RDS(on) Max 180mΩ@ 10V 330mΩ@ 4V ID Max 1.8A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 1.8 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 7.2 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) Junction Temperature PD Tj 0.8 W 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling.
Published: |