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MCH3477 - Power MOSFET

Features

  • High Speed Switching.
  • 1.8V Drive.
  • ESD Diode-Protected Gate.
  • Low On-Resistance.
  • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW10s, duty cycle1% IDP Power Dissipation When mounted on ceramic substrate (900mm20.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance.

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Datasheet Details

Part number MCH3477
Manufacturer ON Semiconductor
File Size 352.45 KB
Description Power MOSFET
Datasheet download datasheet MCH3477 Datasheet
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Full PDF Text Transcription

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MCH3477 Power MOSFET 20V, 38mΩ, 4.5A, Single N-Channel www.onsemi.com Features  High Speed Switching  1.8V Drive  ESD Diode-Protected Gate  Low On-Resistance Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW10s, duty cycle1% IDP Power Dissipation When mounted on ceramic substrate (900mm20.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm20.8mm) Symbol RJA Value 20 12 4.5 18 Unit V V A A 1.0 150 55 to +150 W C C Value Unit 125 C/W VDSS 20V RDS(on) Max 38 mΩ@4.5V 61 mΩ@2.
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