MCH6102 - Bipolar Transistor

onsemi

Key Features

Adoption of MBIT processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm).
High allowable power dissipation Speciﬁcations ( ) : MCH6102 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Symbol VCBO VCEO VEBO Conditions Rati.

MCH6102 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	MCH6102
Manufacturer	onsemi
File Size	487.41 KB
Description	Bipolar Transistor
Datasheet	MCH6102 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6480C MCH6102/MCH6202 Bipolar Transistor (–)30V, (–)1.5A, Low VCE(sat), (PNP)NPN Single MCPH6 http://onsemi.com Applicaitons • Relay drivers, lamp drivers, motor drivers, ﬂash Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Speciﬁcations ( ) : MCH6102 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Symbol VCBO VCEO VEBO Conditions Ratings (--30)40 (--)30 (--)5 Unit V V V Continued on next page. Package Dimensions unit : mm (typ) 7022A-007 2.0 654 0.