ESD diode-Protected gate
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD Tj
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings --30 ±20 --5 --20 1.5 150
--55 to.
Full PDF Text Transcription for MCH6341 (Reference)
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MCH6341. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENA1272B MCH6341 Power MOSFET –30V, 59mΩ, –5A, Single P-Channel http://onsemi.com Features • Low RDS(on) • Pb-free and RoHS Compliance • 4V drive • ESD ...
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Features • Low RDS(on) • Pb-free and RoHS Compliance • 4V drive • ESD diode-Protected gate Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings --30 ±20 --5 --20 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
MCH6341 Datasheet
