MCH6431 - Power MOSFET

onsemi

Key Features

Low On-Resistance.
4V Drive.
ESD Diode-Protected Gate.
Pb-Free, Halogen Free and RoHS Compliance VDSS 30V RDS(on) Max 55mΩ@ 10V 91mΩ@ 4.5V 109mΩ@ 4V ID Max 5A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (1200mm2 × 0.8mm) PD Junction Temperat.

MCH6431 power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	MCH6431
Manufacturer	onsemi
File Size	386.90 KB
Description	Power MOSFET
Datasheet	MCH6431 Datasheet

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Full PDF Text Transcription (Reference)

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MCH6431 Power MOSFET 30V, 55mΩ, 5A, Single N-Channel www.onsemi.com Features • Low On-Resistance • 4V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance VDSS 30V RDS(on) Max 55mΩ@ 10V 91mΩ@ 4.5V 109mΩ@ 4V ID Max 5A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (1200mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (1200mm2 × 0.8mm) Symbol RθJA Value 30 ±20 5 20 Unit V V A A 1.5 150 −55 to +150 W °C °C Value Unit 83.