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MCH6436 - Power MOSFET

Key Features

  • Low On-Resistance.
  • 1.8V Drive.
  • High Speed Switching.
  • ESD Diode-Protected Gate.
  • Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (1500mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resi.

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Datasheet Details

Part number MCH6436
Manufacturer onsemi
File Size 389.12 KB
Description Power MOSFET
Datasheet download datasheet MCH6436 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MCH6436 Power MOSFET 30V, 34mΩ, 6A, Single N-Channel www.onsemi.com Features • Low On-Resistance • 1.8V Drive • High Speed Switching • ESD Diode-Protected Gate • Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (1500mm2 × 0.8mm) PD Junction Temperature Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (1500mm2 × 0.8mm) Symbol RθJA Value 30 ±12 6 24 Unit V V A A 1.5 150 −55 to +150 W °C °C Value Unit 83.3 °C/W VDSS 30V RDS(on) Max 34mΩ@ 4.5V 49mΩ@ 2.5V 69mΩ@ 1.