MCH6437 - Power MOSFET

Product Overview

ON Semiconductor

Part number	MCH6437
Manufacturer	ON Semiconductor
File Size	386.83 KB
Description	Power MOSFET
Datasheet	MCH6437 Datasheet
Additional preview pages of the MCH6437 datasheet.

Low On-Resistance.
1.8V Drive.
ESD Diode-Protected Gate.
Pb-Free and RoHS Compliance VDSS 20V RDS(on) Max 24mΩ@ 4.5V 35mΩ@ 2.5V 65mΩ@ 1.8V ID Max 7A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (1200mm2 × 0.8mm) PD Junction Temperature Tj S.

📁 Similar Datasheet

MCH6431 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
MCH6436 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
MCH6438 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
MCH6401 - Ultrahigh-Speed Switching Applications (Sanyo)
MCH6402 - Ultrahigh-Speed Switching Applications (Sanyo)
MCH6405 - Ultrahigh-Speed Switching Applications (Sanyo)
MCH6406 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
MCH6412 - N-Channel Silicon MOSFET General-Purpose Switching Device Applications (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

Published: Oct 27, 2015 |