The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MCH6444
Power MOSFET 35V, 98mΩ, 2.5A, Single N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance
Typical Applications • Load Switch • Motor Drive
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
35 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID 2.5 A
Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1%
IDP
10 A
Power Dissipation When mounted on ceramic substrate (900mm2 × 0.
MCH6444 Datasheet
