Datasheet4U Logo Datasheet4U.com

MCH6602 - N-Channel Power MOSFET

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 1.5V drive.
  • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm.

📥 Download Datasheet

Datasheet preview – MCH6602

Datasheet Details

Part number MCH6602
Manufacturer ON Semiconductor
File Size 167.62 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MCH6602 Datasheet
Additional preview pages of the MCH6602 datasheet.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Ordering number : EN6445D MCH6602 N-Channel Power MOSFET 30V, 0.35A, 3.7Ω, Dual MCPH6 http://onsemi.com Features • Low ON-resistance • Ultrahigh-speed switching • 1.5V drive • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings 30 ±10 0.35 1.4 0.
Published: |