• Part: MGB19N35CL
  • Manufacturer: onsemi
  • Size: 265.23 KB
Download MGB19N35CL Datasheet PDF
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MGB19N35CL Description

MGP19N35CL, MGB19N35CL Preferred Device Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).

MGB19N35CL Applications

  • Ideal for IGBT−On−Coil or Distributorless Ignition System
  • High Pulsed Current Capability up to 50 A
  • Gate−Emitter ESD Protection