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MJ15001G - Complementary Silicon Power Transistors

Download the MJ15001G datasheet PDF. This datasheet also covers the MJ15001 variant, as both devices belong to the same complementary silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Safe Operating Area.
  • For Low Distortion Complementary Designs.
  • High DC Current Gain.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJ15001_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJ15001G
Manufacturer onsemi
File Size 106.89 KB
Description Complementary Silicon Power Transistors
Datasheet download datasheet MJ15001G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current − Continuous Emitter Current − Continuous Total Power Dissipation @ TC = 25°C Derate above 25°C VCEO VCBO VEBO IC IB IE PD 140 Vdc 140 Vdc 5 Vdc 15 Adc 5 Adc 20 Adc 200 W 1.