Part MJD18002D2
Description Bipolar NPN Transistor
Category Transistor
Manufacturer onsemi
Size 292.45 KB
onsemi

MJD18002D2 Overview

Key Features

  • Low Base Drive Requirement
  • High Peak DC Current Gain (55 Typical) @ IC = 100 mA
  • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
  • Integrated Collector-Emitter Free Wheeling Diode
  • Fully Characterized and Guaranteed Dynamic VCEsat
  • Characteristics Make It Suitable for PFC Application
  • Epoxy Meets UL 94 V-0 @ 0.125 in
  • ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V
  • Six Sigma® Process Providing Tight and Reproductible Parameter Spreads
  • Pb-Free Package is Available