Click to expand full text
www.DataSheet4U.com
MJD18002D2 Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network
The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no longer a need to guarantee an hFE window.
Features http://onsemi.
MJD18002D2 Datasheet
