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MJE802G - Plastic Darlington Complementary Silicon Power Transistors

This page provides the datasheet information for the MJE802G, a member of the MJE700G Plastic Darlington Complementary Silicon Power Transistors family.

Datasheet Summary

Features

  • High DC Current Gain.
  • hFE = 2000 (Typ) @ IC = 2.0 Adc.
  • Monolithic Construction with Built.
  • in Base.
  • Emitter Resistors to Limit Leakage.
  • Multiplication.
  • Choice of Packages.
  • MJE700 and MJE800 Series.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – MJE802G

Datasheet Details

Part number MJE802G
Manufacturer ON Semiconductor
File Size 125.95 KB
Description Plastic Darlington Complementary Silicon Power Transistors
Datasheet download datasheet MJE802G Datasheet
Additional preview pages of the MJE802G datasheet.

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Full PDF Text Transcription

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MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.
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