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MJW21194 - NPN Silicon Power Transistor

Download the MJW21194 datasheet PDF. This datasheet also covers the MJW21193 variant, as both devices belong to the same npn silicon power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Total Harmonic Distortion Characterized.
  • High DC Current Gain.
  • Excellent Gain Linearity.
  • High SOA.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJW21193-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJW21194
Manufacturer onsemi
File Size 190.17 KB
Description NPN Silicon Power Transistor
Datasheet download datasheet MJW21194 Datasheet

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Other Datasheets by onsemi

Part Number Description
MJW21193 PNP Silicon Power Transistor
MJW0281A Complementary NPN-PNP Power Bipolar Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Transistors MJW21193 (PNP) MJW21194 (NPN) The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain  Excellent Gain Linearity  High SOA  These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25C Derate Above 25C VCEO VCBO VEBO VCEX IC ICM IB PD 250 Vdc 400 Vdc 5.0 Vdc 400 Vdc 16 Adc 30 Adc 5.0 Adc 200 W 1.