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MMBD1403ALT1G - Dual Series High Voltage Switching Diode

Download the MMBD1403ALT1G datasheet PDF. This datasheet also covers the MMBD1401ALT1G variant, as both devices belong to the same dual series high voltage switching diode family and are provided as variant models within a single manufacturer datasheet.

General Description

SOT 23 (TO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Key Features

  • Moisture Sensitivity Level: 1.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMBD1401ALT1G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MMBD1403ALT1G
Manufacturer onsemi
File Size 206.25 KB
Description Dual Series High Voltage Switching Diode
Datasheet download datasheet MMBD1403ALT1G Datasheet

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Other Datasheets by onsemi

Part Number Description
MMBD1403 Small Signal Diodes
MMBD1401 Small Signal Diodes
MMBD1401ALT1G Dual Series High Voltage Switching Diode
MMBD1404 Small Signal Diodes
MMBD1405 Small Signal Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Dual Series High Voltage Switching Diode MMBD1401ALT1G, MMBD1403ALT1G Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 V Repetitive Peak Reverse Voltage VRRM 250 V Peak Forward Current IF 225 mA DC Forward Current IF 600 mA Recurrent Peak Forward Current If 700 mA Peak Forward Surge Current IFM(surge) 625 mA THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board PD (Note 1) TA = 25°C Derate above 25°C 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.