MMBF5485 - N-Channel RF Amplifier

onsemi

Download the MMBF5485 datasheet PDF. This datasheet also covers the MMBF5484 variant, as both devices belong to the same n-channel rf amplifier family and are provided as variant models within a single manufacturer datasheet.

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MMBF5485 n-channel rf amplifier by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MMBF5484-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MMBF5485
Manufacturer	onsemi
File Size	259.77 KB
Description	N-Channel RF Amplifier
Datasheet	MMBF5485 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MMBF5485	N-Channel RF Amplifier	Fairchild Semiconductor
MMBF5484	N-Channel RF Amplifier	Fairchild Semiconductor
MMBF5484LT1	JFET Transistor	Motorola
MMBF5486	N-Channel RF Amplifier	Fairchild Semiconductor
MMBF5457	N-Channel General Purpose Amplifier	Fairchild

Other Datasheets by onsemi

Part Number	Description
MMBF5484	N-Channel RF Amplifier
MMBF5486	N-Channel RF Amplifier
MMBF5457	N-Channel Amplifier
MMBF5103	N-Channel Switch
MMBF0201NL	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel RF Amplifier MMBF5484, MMBF5485, MMBF5486 This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. ABSOLUTE MAXIMUM RATINGS* (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 V −25 V 10 mA −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These rating are limiting values above which the serviceability of any semiconductor device may be impaired. 1.