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N-Channel JFET
J109, MMBFJ108
Features
• This Device is Designed for Digital Switching Applications where
Very Low On Resistance is Mandatory
• Sourced from Process 58 • These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2)
Symbol
Parameter
Value
Unit
VDG VGS IGF TJ, TSTG
Drain−Gate Voltage
Gate−Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
V
−25
V
10
mA
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits.
MMBFJ108 Datasheet
