MMBFJ202 Datasheet | onsemi

Description This device is designed primarily for low level audio and general- purpose applications with high impedance signal sources. Sourced from process 52. Applications - These are Pb- Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) (Note 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain- Gate Voltage Gate- Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range - 40 50 m A - 55 to 150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady- state limits. onsemi should be consulted on applications involving pulsed or low- duty- cycle operations. THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Note 3) Symbol Parameter Max Unit Total Device Dissipation Derate Above 25_C 2.8 m W m W/C Rq JA Thermal Resistance, Junction- to- Ambient C/W 3. Device mounted on FR- 4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2. DATA SHEET .onsemi. 1 2 SOT- 23 (TO- 236) CASE 318-...