MMBFJ211 - N-Channel RF Amplifier

onsemi

General Description

applications where process 50 is not adequate.

noise for sensitive receivers.

Sourced from process 90.

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MMBFJ211 n-channel rf amplifier by onsemi - Datasheet Preview

Datasheet Details

Part number	MMBFJ211
Manufacturer	onsemi
File Size	314.20 KB
Description	N-Channel RF Amplifier
Datasheet	MMBFJ211 Datasheet

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Full PDF Text Transcription (Reference)

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N-Channel RF Amplifier J211, MMBFJ211 Description This device is designed for HF/VHF mixer/amplifier and applications where process 50 is not adequate. Sufficient gain and low−noise for sensitive receivers. Sourced from process 90. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Notes 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 V −25 V 10 mA −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2.