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MMBT2907ALT1
General Purpose Transistors
PNP Silicon
Features
•ăPb-Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collectorā-āEmitter Voltage Collectorā-āBase Voltage Emitterā-āBase Voltage Collector Current - Continuous Collector Current - Peak (Note 3) THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC ICM
-60 -60 -5.0 -600 -1200
Vdc Vdc Vdc mAdc mAdc
Characteristic
Total Device Dissipation FR-ā5 Board (Note 1) @TA = 25°C Derate above 25°C
Symbol
Max
Unit
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C
RqJA PD
556 °C/W
300 mW 2.