MMBT2907ALT1
MMBT2907ALT1 is General Purpose Transistors manufactured by onsemi.
Features
- ăPb-Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collectorā-āEmitter Voltage Collectorā-āBase Voltage Emitterā-āBase Voltage Collector Current
- Continuous Collector Current
- Peak (Note 3) THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC ICM
-60 -60 -5.0 -600 -1200
Vdc Vdc Vdc m Adc m Adc
Characteristic
Total Device Dissipation FR-ā5 Board (Note 1) @TA = 25°C Derate above 25°C
Symbol
Max
Unit
PD 225 m W
1.8 m W/°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C
Rq JA PD
556 °C/W
300 m W 2.4 m W/°C
Thermal Resistance, Junction-to-Ambient Rq JA
417 °C/W
Junction and Storage Temperature
TJ, Tstg -ā55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. FR-ā5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve.
COLLECTOR 3
1 BASE
2 EMITTER
1 2
SOT-23 (TO-236AB) CASE 318 STYLE 6
MARKING DIAGRAM
2FĂMĂG...
