MMBT3904TT1G Datasheet | onsemi

Features - AEC- Q101 Qualified and PPAP Capable - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant- MAXIMUM RATINGS (TA = 25C) Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc m Adc Characteristic Total Device Dissipation, FR- 4 Board (Note 1) @TA = 25C Derated above 25C Symbol PD Max 200 1.6 Unit m W m W/C Thermal Resistance, Junction- to- Ambient (Note 1) Rq JA C/W Total Device Dissipation, FR- 4 Board (Note 2) @TA = 25C Derated above 25C Thermal Resistance, Junction- to- Ambient (Note 2) PD Rq JA 300 m W 2.4 m W/C C/W Junction and Storage Temperature Range TJ, Tstg - 55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. FR- 4 @ Minimum Pad 2. FR- 4 @ 1.0  1.0 Inch Pad - For additional information on our Pb- Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor ponents Industries, LLC, 2011 November, 2011 - Rev. 5 http://onsemi. GENERAL PURPOSE AMPLIFIER...